Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
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概要
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In this paper, we propose a method of analyzing electron tunneling components in the inversion mode of p+ poly-gate p-channel metal–oxide–semiconductor field-effect transistors from the direct tunneling (DT) region to the Fowler–Nordheim (FN) region. In order to avoid the uncertainty of determining tunneling current–voltage ($I$–$V$) fitting parameters, the quantum yield measurement at different gate oxide thicknesses can have potential applications in identifying the tunneling components as follows: (i) in the DT region, electron tunneling still originates from the valence band edge; and (ii) particularly in the FN region, interface-state-assisted FN tunneling dominates electron current and lies between the Fermi level and the valence band edge, instead of the Fermi level as a reference energy level proposed by Pompl et al. [European Solid-State Device Research Conf., 2000, p. 292]. This results in a revised voltage-dependent barrier height for the calculation of FN tunneling.
- 2007-05-30
著者
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Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
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Kang Ting-kuo
Department Of Electronic Engineering Cheng Shiu University
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Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.
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