Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region

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概要

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• In this paper, we propose a method of analyzing electron tunneling components in the inversion mode of p+ poly-gate p-channel metal–oxide–semiconductor field-effect transistors from the direct tunneling (DT) region to the Fowler–Nordheim (FN) region. In order to avoid the uncertainty of determining tunneling current–voltage ($I$–$V$) fitting parameters, the quantum yield measurement at different gate oxide thicknesses can have potential applications in identifying the tunneling components as follows: (i) in the DT region, electron tunneling still originates from the valence band edge; and (ii) particularly in the FN region, interface-state-assisted FN tunneling dominates electron current and lies between the Fermi level and the valence band edge, instead of the Fermi level as a reference energy level proposed by Pompl et al. [European Solid-State Device Research Conf., 2000, p. 292]. This results in a revised voltage-dependent barrier height for the calculation of FN tunneling.

• 2007-05-30

著者

• Wu San-lein

  Department Of Electronic Engineering Cheng Shiu University

• Kang Ting-kuo

  Department Of Electronic Engineering Cheng Shiu University

• Wu San-Lein

  Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.

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• Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
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• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
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• GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
• Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
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