Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

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• In this study, we have systematically re-investigated impact ionization (II) characteristics in strained-Si n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) with different strained-Si cap layers at two Ge contents. The strained-Si nMOSFETs can supply further II experimental conditions with band-gap energy narrowing, higher electron mobility, and greater scattering caused by the Ge out-diffusion effect. Despite such II conditions, no marked difference in the II multiplication coefficient as a function of drain voltage, $M-1(V_{\text{D}})$, between unstrained- and strained-Si nMOSFETs is found for widely accepted strain-enhanced II efficiency, implying that II efficiency depends on the maximum channel electric field $E_{\text{m}}$ in the pinch-off region. Through the translation of $M-1(V_{\text{D}})$ into $M-1(E_{\text{m}})$, it is found that strain-enhanced II efficiency is attributed to the narrowing of band-gap energy, taking into account the difference in source/drain junction depth between unstrained- and strained-Si nMOSFETs.

• 2008-04-25

著者

• Wu San-lein

  Department Of Electronic Engineering Cheng Shiu University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Huang Po-chin

  Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit

• Kang Ting-kuo

  Department Of Electronic Engineering Cheng Shiu University

• Sa Yu-huan

  Department Of Electronic Engineering Cheng Shiu University

• Kang Ting-Kuo

  Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.

• Huang Po-Chin

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Sa Yu-Huan

  Department of Electronic Engineering, Cheng Shiu University, No. 840, Chengching Rd., Niaosong Township, Kaohsiung County 833, Taiwan, R.O.C.

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