Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates

スポンサーリンク

概要

• 論文の詳細を見る
• 2013-04-25

著者

• Hung Fei-yi

  Department Of Material Science And Engineering National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Hu Zhan-shuo

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• CHANG Sheng-Po

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• Chen Kuan-Jen

  The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan

• Chen Tse-Pu

  Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• CHANG Shoou-Jinn

  Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University

関連論文

• The Charge-Discharge Characteristics of Woody Carbon Modified with Fe_3O_4 Nano Phase Using the Hydrothermal Method
• Microstructural Characteristics and the Charge-Discharge Characteristics of Sn-Cu Thin Film Materials
• Electric Flame-Off Characteristics and Fracture Properties of 20μm Thin Copper Bonding Wire
• Weibull Statistics for Evaluating Failure Behaviors and Joining Reliability of Friction Stir Spot Welded 5052 Aluminum Alloy
• Mechanical Properties and Resonant Characteristics of Friction Stirred AZ31-Mg Alloy
• The Recrystallization of Microelectronic Lead-Free Solders
• Influence of Ga addition on Microstructure, Tensile Properties and Surface Oxide Film Characteristics of Microelectronic Sn-9Zn-xGa Solders
• Microstructures and Fusing Electrical Current of Microelectronic Sn-9Zn-(0.25RE) Solders
• Deformation Fracture Characteristics of Microelectronic Sn-3.0Ag-0.5Cu-xNi Solders
• The Effect of Electrical Current on Tensile Properties and Vibration Characteristics of Sn-9Zn-1Cu Lead-Free Solder
• Electrochemical Characteristics of LiMn_2O_4 (Li/Ni) Cathode Materials
• Recrystallization Effect and Electric Flame-Off Characteristic of Thin Copper Wire
• Thin Film Characteristics of Sn-3.5Ag-(2.0Cu) Alloy
• Phase Transformation of an Austempered Ductile Iron during an Erosion Process
• Effect of Austempering Duration on Erosion Wear Resistance of ADI by Al_2O_3 Particle
• The Microstructural Effects on Tensile Properties and Erosion Wear Resistance in Upper Bainitic ADI Related to Variation in Silicon Content
• Effect of Morphology and Si Content on SiO_2 Particle Erosion of Full Pearlitic Spheroidal Graphite Cast Iron
• Effect of Si Content on SiO_2 Particle Erosion of Spheroidal Graphite Cast Iron
• Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
• High Brightness InGaN/GaN LEDs with ESD Protection
• High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
• Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
• P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
• On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
• Variation of Microstructure and Electrical Conductivity of Amorphous AgInSbTe and SbTe Films during Crystallization
• Activation Energy of AgInSbTe Film through Isothermal Sheet Resistance Measurements
• Microstructures and the Charge-Discharge Characteristics of Advanced Al-Si Thin Film Materials
• Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
• Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
• Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
• ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
• Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
• Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
• A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
• Embrittlement Mechanism on Tensile Fracture of 7075 Al Alloy with Friction Stir Process (FSP)
• Effect of the Twins on Mechanical Properties of AISI 304 Stainless Steel Wire Using Electrical Current Method
• Crystal Polarity Effects on Magnesium Implantation into GaN Layer
• Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
• Structural Effects and Charge-Discharge Characteristics of Mg-C/Mg-Li Alloy Thin Film Materials
• ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
• Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
• AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
• The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
• Effects of Vacuum Annealing on the Charge-Discharge Characteristics of Eutectic Al-Si/Al Thin Film as Anode Material for Li-Ion Batteries
• Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
• Microstructural Effects of Zn/Mg Ratio and Post Heat Treatment on Tensile Properties of Friction Stirred Process (FSP) Al-xZn-yMg Alloys
• Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
• InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
• Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
• GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
• Reducing the Current Crowding Effect on Nitride-Based Light-Emitting Diodes Using Modulated P-Extension Electrode Thickness
• AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
• n-UV+Blue/Green/Red White Light Emitting Diode Lamps
• Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
• Effects of Vacuum Annealing on the Charge-Discharge Characteristics of Eutectic Al-Si/Al Thin Film as Anode Material for Li-Ion Batteries
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
• Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
• Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
• InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
• AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
• Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
• High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
• Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
• High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
• InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
• Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
• GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
• GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
• Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
• High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
• Microstructures and Mechanical Properties of Austempering Cr-Mo(SCM 435) Alloy Steel
• Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
• Effects of Electrical Current on Microstructure and Interface Properties of Sn-Ag-Cu/Ag Photovoltaic Ribbons
• Effects of Friction Stir Process and Stabilizing Heat Treatment on the Tensile and Punch-Shear Properties of Mg-9Li-2Al-1Zn Magnesium Alloy

もっと見る 閉じる

スポンサーリンク