The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads

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概要

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• In this study, we demonstrated the fabrication of GaN-based light-emitting diodes (LEDs) on a patterned sapphire substrate (PSS) or non-PSS with nonalloy Ag/Cr/Au trilayer metal electrode pads on the exposed n+-GaN and indium tin oxide layers to be the n-type electrode and p-type electrode, respectively. The forward voltages of all LED samples at 20 mA were in the range of 3.1–3.2 V and were sufficiently low compared with those of commercial GaN-based LEDs. In the present experiment, the 20 mA output power of GaN-based LEDs with Ag/Cr/Au trilayer electrode bonding pads can be increased by a magnitude of 17% compared with those of the conventional LEDs with nonalloy Cr/Au bonding pads. Moreover, the 20 mA output power of GaN-based LEDs will be increased by more than 40 and 11% by introducing PSS and Ag/Cr/Au trilayer electrode bonding pads compared with those of the conventional LEDs and PSS LEDs, respectively, with nonalloy Cr/Au bonding pads.

• 2009-10-25

著者

• Lai Wei-chih

  Institute Of Electro-optical Science And Engineering National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Shei Shih-chang

  Department Of Electrical Engineering National Cheng Kung University

• Sheu Jinn-Kong

  Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China

• Lai Wei-Chih

  Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Shei Shih-Chang

  Department of Electronic Engineering, National University of Tainan, Tainan 700, Taiwan

• Hung I-Hsiu

  Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Chang Shoou-Jinn

  Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

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