Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors

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概要

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• A new quaternary material of GaInNAs has been proposed as base material for GaAs-based double-heterojunction bipolar transistors (DHBTs). The used InGaAs as base material results in the lower band gap energy of the base layer in heterojunction bipolar transistors (HBTs) followed by a smaller turn-on voltage. However, the compressive strain induced by the InGaAs grown on GaAs diminishes the influence of indium-addition induced band gap energy reduction, and thus abate turn-on voltage reduction. By incorporating suitable amounts of indium (In) and nitrogen (N) into GaAs, a smaller band gap material of GaInNAs lattice-matched to GaAs substrate can be obtained. In this study, N-$p$-$n$ InGaP/Ga0.985In0.015N0.005As0.995/GaAs DHBTs have been demonstrated. A turn-on voltage reduction of 215 mV compared to that of the conventional HBT with a GaAs base layer was obtained. The device has a peak current gain of 85 and shows good high-frequency characteristics of $f_{\text{T}}$ and $f_{\text{MAX}}$, which are both higher than 40 GHz

• 2004-04-15

著者

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Wei Shang-Chin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

• Chen Wei-Chang

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

• Chang Shoou-Jinn

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

• Sio Chi-Cheong

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

• Wu Cheng-Hsien

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

• Su Yan-Kuin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC

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