GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure
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概要
- 論文の詳細を見る
GaInNAs/GaAs p–i–n photodetectors with 3 and 15 periods multiquantum wells (MQW) as the i-layer have been grown by metal–organic vapor-phase epitaxy (MOVPE). The cutoff wavelength of spectral responsivity occurs at around 1150 nm and reflects the transition energy of the GaInNAs/GaAs MQW. Because of to the good crystal quality that the devices with three periods MQW have, a two orders of magnitude increase in the responsivity rejection ratio is realized between 1150 and 1250 nm at a reverse bias of 2.0 V. The junction breakdown voltage is obtained at a reverse bias of 18.4 V. The ideality factor indicates that the conduction mechanism is dominated by the diffusion process, and the defect scattering effect caused by the misfit dislocations is only slight. On the other hand, the device with 15 periods MQW induces a higher value of misfit dislocations, and shows a partial relaxation phenomenon and thus it shows relatively poor characteristics.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Chuang Ricky
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chen Yung-feng
Institute Of Microelectronics And Advanced Optoelectronic Technology Center National Cheng Kung Univ
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Chen Wei-cheng
Institute Of Microelectronics And Advanced Optoelectronic Technology Center National Cheng Kung Univ
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Tsai Huo-lieh
Advanced Device Technology Department Taiwan Semiconductor Manufacturing Company Ltd.
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Chen Wei-Cheng
Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Tsai Huo-Lieh
Advanced Device Technology Department, Taiwan Semiconductor Manufacturing Co., Ltd., Tainan 741, Taiwan
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Chen Yung-Feng
Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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