Functional Enhancement of Metal–Semiconductor–Metal Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method

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概要

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• We report a detailed procedure of using the anodic oxidation to passivate the SiGe film surface in order to enhance the functionality Si/SiGe heterojunction infrared metal–semiconductor–metal (MSM) photodetectors. Specifically, we seek to reduce the magnitude of the dark current while simultaneously boosting the photocurrent to dark current contrast ratio of MSM devices. Our study demonstrated that the current ratio was boosted by more than tenfold compared to that of the device capped with photo-chemical vapor deposited oxide. In addition, a sizable reduction in dark current (more than 3 to 5 orders of magnitude) was achieved for samples prepared at lower current densities compared to that of a sample without being treated with anodic oxidation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Usami Noritaka

  Institute For Material Research Tohoku University

• Chuang Ricky

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Liao Zhen-liang

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Chiang Huai-tzu

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Chiang Huai-Tzu

  Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center (AOTC), and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

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