Luminescence from Strained Si_<1-x>Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-03-30

著者

• Usami N

  Institute For Materials Research (imr) Tohoku University

• Usami Noritaka

  Tohoku Univ. Miyagi Jpn

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Usami Noritaka

  Institute For Material Research Tohoku University

• Usami Noritaka

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• FUKATSU Susumu

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Fukatsu Shigeto

  Department Of Applied Physics And Physico-informatics And Crest-jst Keio University

• Usami Noritaka

  Institute For Materials Research (imr) Tohoku University

• Fukatsu S

  Univ. Tokyo Tokyo Jpn

• Fukatsu Susumu

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo:(present Address

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

関連論文

• Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
• Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
• Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
• On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
• Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
• In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
• Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
• Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
• Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
• Photoluminescence of Erbium Implanted in SiGe
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
• Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
• Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
• Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
• Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
• Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
• Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
• Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
• Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
• Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
• Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
• Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
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