Growth of Si_xGe_<-x>(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-06-01

著者

• SAZAKI Gen

  Institute of Materials Science, Tohoku University

• USAMI Noritaka

  Institute for Materials Research, Tokoku University

• Usami N

  Institute For Materials Research (imr) Tohoku University

• NAKAJIMA Kazuo

  Institute for Materials Research (IMR), Tohoku University

• Ujihara T

  Institute For Materials Research (imr) Tohoku University

• Ujihara Toru

  Institute For Materials Research Tohoku University

• Usami Noritaka

  Institute For Material Research Tohoku University

• MIYASHITA Satoru

  Toyama Medical and Pharmaceutical University

• MURAKAMI Yoshihiro

  Institute for Materials Research, Tohoku University

• MIYASHITA Satoru

  Institute for Materials Research, Tohoku University

• AZUMA Yukinaga

  Institute for Materials Research (IMR), Tohoku University

• Azuma Yukinaga

  Institute For Materials Research (imr) Tohoku University

• Nakajima Kensuke

  Research Institute Of Electrical Communication Tohoku University

• Murakami Yoshihiro

  Institute For Materials Research

• Sazaki G

  Institute For Materials Research (imr) Tohoku University

• Miyashita Satoru

  Institute For Materials Research Tohoku University

• Ujihara Toru

  Institute For Materials Research (imr) Tohoku University

• Sazaki Gen

  Institute For Materials Research (imr) Tohoku University

• Murakami Yoshihiro

  Institute For Materials Research (imr) Tohoku University

• Nakajima Kazuo

  Institute For Materials Research (imr) Tohoku University

• Miyashita Satoru

  Institute for Materials Research (IMR), Tohoku University

• Nakajima Kazuo

  Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan

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