Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-15
著者
-
SAZAKI Gen
Institute of Materials Science, Tohoku University
-
USAMI Noritaka
Institute for Materials Research, Tokoku University
-
Usami N
Institute For Materials Research (imr) Tohoku University
-
PAN Wugen
Institute for Materials Research (IMR), Tohoku University
-
FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
-
NAKAJIMA Kazuo
Institute for Materials Research (IMR), Tohoku University
-
Ujihara Toru
Institute For Materials Research Tohoku University
-
Pan W
Tohoku Univ. Sendai Jpn
-
Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
-
Fujiwara K
Institute For Materials Research (imr) Tohoku University
関連論文
- Growth mechanisms of protein crystals at high supersaturation
- DEFECT GENERATION DURING CRYSTAL GROWTH OF LYSOZYME
- Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
- In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al_2O_3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
- Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
- Structural and Optical Properties of ZnO Epitaxial Films Grown on Al_2O_3 (1120) Substrates by Metalorganic Chemical Vapor Deposition
- High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
- Search for Perovskite-Type New Boride in the Sc-Ni-B System
- Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
- Crystal Growth and Properties of AlLiB_ : Magnetism
- REMn_2Si_2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties : Magnetism
- Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
- R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
- In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Etch-Back Planarization Technique for Multilevel Metallization
- On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Magnetic Damping of the Temperature-Driven Convection in NaCl Aqueous Solution Using a Static and Homogeneous Field of 10 T
- Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
- Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
- Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
- Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Hydrogen-Absorption Effect on YBa_2Cu_3O_x
- Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- Electrical and Magnetic Properties of the High-T_c Superconductors (Y_M_x)Ba_2Cu_3O_y and Y(Ba_M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- Observation of Defects in Laser-Crystallized Polysilicon Thin Films by Hydrogenation and Raman Spectroscopy
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures : Surfaces, Interfaces and Films
- Sex differences in the chemical induction of micronuclei in the rat
- Atomic Force Microscopic Study of Subsurface Ordering and Structural Transforms in n-Alcohol on Mica and Graphite
- Electro-Optical Bistability and Multistability in GaAs/AlAs Superlattices with Different Miniband Widths
- Room Temperature Stark-Ladder Transitions in GaAs/AlAs Superlattices with Different Miniband Widths
- 19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth
- Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Improvement of photovoltaic characteristics of B-doped Czochralski-Silicon by Ge codoping
- Fabrication of Quasi-Phase-Matching Structure during Paraelectric Borate Crystal Growth