19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)
スポンサーリンク
概要
- 論文の詳細を見る
We proved that impurity protein molecules adsorbed more preferentially on steps than on a terrace and an induction time period existed at the initial stage of the adsorption process, on the basis of the direct observation of the adsorption process of individual fluorescent labeled impurity molecules on a tetragonal lysozyme crystal.
- 日本結晶成長学会の論文
- 2005-08-17
著者
-
TSUKAMOTO Katsuo
Graduate School of Science, Tohoku University
-
SAZAKI Gen
Institute of Materials Science, Tohoku University
-
NAKAJIMA Kazuo
Institute for Materials Research (IMR), Tohoku University
-
Sazaki Gen
Institute Of Materials Science Tohoku University
-
Sazaki Gen
Center For Interdisciplinary Research Tohoku University:institute Of Material Research Tohoku Univer
-
Dai Guoliang
Center For Interdisciplinary Research Tohoku University:institute Of Mechanics Chinese Academy Of Sc
-
Matsui Takuro
Center for Interdisciplinary Research, Tohoku University
-
Matsui Takuro
Center For Interdisciplinary Research Tohoku University:institute Of Material Research Tohoku Univer
-
Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
-
Tsukamoto Katsuo
Graduate School Of Science Tohoku University
-
Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
関連論文
- Growth mechanisms of protein crystals at high supersaturation
- DEFECT GENERATION DURING CRYSTAL GROWTH OF LYSOZYME
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
- Search for Perovskite-Type New Boride in the Sc-Ni-B System
- Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
- Crystal Growth and Properties of AlLiB_ : Magnetism
- REMn_2Si_2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties : Magnetism
- Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
- R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
- Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
- On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
- Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
- In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Magnetic Damping of the Temperature-Driven Convection in NaCl Aqueous Solution Using a Static and Homogeneous Field of 10 T
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- Observation of Defects in Laser-Crystallized Polysilicon Thin Films by Hydrogenation and Raman Spectroscopy
- Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
- Sex differences in the chemical induction of micronuclei in the rat
- Production of WTC.ZI-zi Rat Congenic Strain and Its Pathological and Genetic Analyses
- Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
- Atomic Force Microscopic Study of Subsurface Ordering and Structural Transforms in n-Alcohol on Mica and Graphite
- 19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-($1{\times} 1$) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Proc
- Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III-V Ternary Quantum Dots
- Search for Perovskite-Type New Boride in the Sc–Ni–B System
- High-Temperature Solution Growth and Characterization of Chromium Disilicide
- High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
- Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
- High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
- Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
- Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
- Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
- Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions