NAKAJIMA Kazuo | Institute for Materials Research (IMR), Tohoku University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
Search for Perovskite-Type New Boride in the Sc-Ni-B System
Hardness and Oxidation Resistance of Perovskite-type Solid Solution of the ScRh_3B-ScRh_3C System
Crystal Growth and Properties of AlLiB_ : Magnetism
REMn_2Si_2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties : Magnetism
Boron-Carbon Atomic Ratio Dependence on the Hardness and Oxidation Resistance of Solid Solutions of Perovskite-Type Borocarbide YRh_3B_xC_ (O ≦ x ≦ 1)
R-Dependency of the Hardness Of Perovskite-Type RRh_3B Compounds (R = La, Gd, Lu and Sc) : Structure and Mechanical and Thermal Properties of Condensed Matter
High-Temperature Solution Growth and Characterization of Chromium Disilicide
Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
Magnetic Damping of the Temperature-Driven Convection in NaCl Aqueous Solution Using a Static and Homogeneous Field of 10 T
Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
Observation of Defects in Laser-Crystallized Polysilicon Thin Films by Hydrogenation and Raman Spectroscopy
Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
Sex differences in the chemical induction of micronuclei in the rat
19aD07 The first direct observation of the adsorption process of individual impurity molecules on a protein crystal surface by optical microscopy(NCCG-35)

もっと見る

スポンサーリンク