AZUMA Yukinaga | Institute for Materials Research (IMR), Tohoku University
スポンサーリンク
概要
関連著者
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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Usami N
Institute For Materials Research (imr) Tohoku University
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NAKAJIMA Kazuo
Institute for Materials Research (IMR), Tohoku University
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Ujihara Toru
Institute For Materials Research Tohoku University
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AZUMA Yukinaga
Institute for Materials Research (IMR), Tohoku University
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SAZAKI Gen
Institute of Materials Science, Tohoku University
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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Ujihara T
Institute For Materials Research (imr) Tohoku University
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Usami Noritaka
Institute For Material Research Tohoku University
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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MIYASHITA Satoru
Toyama Medical and Pharmaceutical University
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MURAKAMI Yoshihiro
Institute for Materials Research, Tohoku University
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MIYASHITA Satoru
Institute for Materials Research, Tohoku University
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NISHIJIMA Yoshito
Fujitsu Laboratories Ltd.
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Azuma Yukinaga
Institute For Materials Research (imr) Tohoku University
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Murakami Yoshihiro
Institute For Materials Research
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Fujiwara K
Institute For Materials Research (imr) Tohoku University
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Sazaki G
Institute For Materials Research (imr) Tohoku University
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Miyashita Satoru
Institute For Materials Research Tohoku University
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Ujihara Toru
Institute For Materials Research (imr) Tohoku University
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Sazaki Gen
Institute For Materials Research (imr) Tohoku University
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Murakami Yoshihiro
Institute For Materials Research (imr) Tohoku University
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Nakajima Kazuo
Institute For Materials Research (imr) Tohoku University
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Miyashita Satoru
Institute for Materials Research (IMR), Tohoku University
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Nakajima Kazuo
Institute for Materials Reseach, Tohoku University, 2-1-1 Katahira-cho, Aoba-ku, Sendai 980-8577, Japan
著作論文
- Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
- Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface