Fujiwara K | Institute For Materials Research (imr) Tohoku University

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概要

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著作論文

High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
High-Temperature Solution Growth and Characterization of Chromium Disilicide
Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
Successful Growth of In_x Ga_As (x>0.18) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
Effect of Aluminium Composition on the Luminescence of AlAs/Al_xGa_As Multiple Quantum Wells
Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices
Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode
On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy
Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
Hydrogen-Absorption Effect on YBa_2Cu_3O_x
Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
Electrical and Magnetic Properties of the High-T_c Superconductors (Y_M_x)Ba_2Cu_3O_y and Y(Ba_M_x)_2Cu_3O_y (M=Mg, Ca, Sr, Ba)
Realization of a High-Performance Point-Focusing Monochromator for X-ray Studies
In-Plane Photocurrent Spectroscopy of Undoped GaAs/AlAs Quantum Well Heterostructures : Surfaces, Interfaces and Films
Electro-Optical Bistability and Multistability in GaAs/AlAs Superlattices with Different Miniband Widths
Room Temperature Stark-Ladder Transitions in GaAs/AlAs Superlattices with Different Miniband Widths

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