YAMAMOTO Teiji | ATR Optical and Radio Communications Research Laboratories
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概要
関連著者
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YAMAMOTO Teiji
ATR Optical and Radio Communications Research Laboratories
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Takebe Toshihiko
Atr Optical And Radio Communications Research Laboratories
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INAI Makoto
ATR Optical and Radio Communications Research Laboratories
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Watanabe T
Reserch And Development Division Toto Ltd.
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe T
Tohoku Univ. Sendai Jpn
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KOBAYASHI Kikuo
ATR Optical and Radio Communications Research Laboratories
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kamigaki K
College Of Liberal Arts Toyama University
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Kudoh Kazuhide
Department Of Applied Physics Tokyo University Of Science
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KAWASHIMA Kenji
ATR Optical and Radio Communications Research Laboratories
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Fujiwara K
Institute For Materials Research (imr) Tohoku University
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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LOVELL David
ATR Optical and Radio Communications Research Laboratories
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Lovell David
Atr Optical And Radio Communications Research Laboratories:(present Address)i-stat Canada Ltd.
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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FUJIWARA Kenzo
ATR Optical and Radio Communications Research Laboratories
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FUJIWARA Kenzo
Department of Electrical Engineering, Kyushu Institute of Technology
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Fujiwara Kenzo
Department Of Electric Engineering Kyushu Institute Of Technology
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SHINODA Akinori
ATR Optical Radio Communications Research Laboratories
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SIGETA Mitsuhiro
ATR Optical and Radio Communications Research Laboratories
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Shinoda Akinori
Atr Optical And Radio Communications Research Laboratories
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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Kitazawa Koichi
Ntt Basic Research Laboratories
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Kurihara K
Ntt Basic Research Laboratories
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HOSODA Makoto
ATR Optical and Radio Communications Research Laboratories
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FUJII Mototada
ATR Optical and Radio Communications Research Laboratories
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
著作論文
- Miniband Edge Optical Transitions in Photocurrent Spectra of GaAs/AlAs Superlattices
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates
- Low Resistance NiAuGe/Au Ohmic Contacts on N-Type (111)A GaAs
- Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Welts on (111)A Patterned Substrates
- Low Diffusivity of Dopants in (111)A GaAs
- Misorientation Dependernce of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
- Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
- Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy
- Lateral P-N Subband Junctions Fabricated on Patterned Substrates
- Estimation of the Surface State Density of N-Type (111)A GaAs Grown Using Molecular Beam Epitaxy
- Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy
- Electro-Optical Bistability and Multistability in GaAs/AlAs Superlattices with Different Miniband Widths
- Room Temperature Stark-Ladder Transitions in GaAs/AlAs Superlattices with Different Miniband Widths