Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-07-15

著者

• Watanabe Teruo

  Futaba Corporation

• Watanabe T

  Components Development Group Sony Corporation

• Watanabe T

  Ritsumeikan Univ. Shiga Jpn

• Watanabe Tetsu

  Components Development Group Sony Corporation

• WATANABE Toshihide

  ATR Optical and Radio Communication Research Laboratory

• Watanabe T

  Tokyo Inst. Technol. Kanagawa Jpn

• Watanabe T

  Reserch And Development Division Toto Ltd.

• Watanabe T

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Watanabe T

  Tohoku Univ. Sendai Jpn

• Watanabe Toshihide

  Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La

• FUJITA Kazuhisa

  ATR Optical and Radio Communications Research Laboratories

• Yamamoto Takenori

  Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology

• Yamamoto Tokujirou

  Department Of Materials Science And Engineering Kyoto University

• YAMAMOTO Teiji

  ATR Optical and Radio Communications Research Laboratories

• Takebe Toshihiko

  Atr Optical And Radio Communications Research Laboratories

• Yamamoto Takayoshi

  The Institute Of Scientific And Industrial Research Osaka University

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