Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-07-15
著者
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Watanabe T
Reserch And Development Division Toto Ltd.
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe T
Tohoku Univ. Sendai Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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YAMAMOTO Teiji
ATR Optical and Radio Communications Research Laboratories
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Takebe Toshihiko
Atr Optical And Radio Communications Research Laboratories
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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