Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
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概要
- 論文の詳細を見る
A lateral interband tunneling transistor with gate-controlled negative differential resistance characteristics is demonstrated for the first time on a GaAs(111)A patterned substrate. Si-doped GaAs layers are grown on GaAs(111)A and GaAs(311)A patterned substrates by molecular beam epitaxy to fabricate lateral p-n junctions. Both samples show interband tunneling diode characteristics. Furthermore, a gate electrode is fabricated on the (111)A sample. The lateral tunneling transistor shows a modulated peak current density that ranges from 0.41 to 0.90 mA/cm2 by varying the gate voltage from -5.0 to 5.0 V at 77 K.
- 1996-02-28
著者
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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HIRAI Manabu
ATR Optical and Radio Communications Research Laboratories
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OHNISHI Hajime
ATR Optical and Radio Communications Research Laboratories
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Hirai Manabu
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
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Ohnishi Hajime
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
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Fujita Kazuhisa
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
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