Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
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概要
- 論文の詳細を見る
We report absorption saturation behaviors of the photocurrent versus reverse bias voltage characteristics (i–V characteristics) under high intensity optical pulse excitation in short-period GaAs/AlAs superlattices. While a negative differential resistance (NDR) region in the i–V curve normally appeared due to the Wannier–Stark localization effect under low intensity excitation, vanishing of the NDR was observed under high excitation. Simultaneously, an anomalously stretched photocurrent tail and long-lived photoluminescence were observed. These phenomena are clearly explained by electric field screening caused by remaining photogenerated holes in the superlattice region. Simulation results of carrier transport in thin-barrier superlattices using one-dimensional Green's function for the electric potential explain well the experimental results.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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TOMINAGA Kouji
ATR Optical and Radio Communications Research Laboratories
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Fujiwara Kenzo
Department Of Electric Engineering Kyushu Institute Of Technology
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Tominaga Kouji
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Fujiwara Kenzo
Department of Electrical Engineering, Kyushu Institute of Technology, Tobata-ku, Kitakyushu 804, Japan
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