Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
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概要
- 論文の詳細を見る
Dips in the photocurrent, and enhancement of both the photoluminescence intensity and lifetime, are observed at resonance voltages between the ground Γ state and the X states in GaAs/AlAs type-I superlattices. These experimental results suggest that electron transfer from the Γ to X states hinders the sweep-out of electrons.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Yokoo K
Tohoku Univ. Sendai Jpn
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Yokoo Kuniyoshi
Research Institute Of Electrical Commnication Tohoku University
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Mimura Hidenori
Research Institute Of Electrical Commnication Tohoku University
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Mimura Hidenori
Graduate School Of Electric Science And Technology Shizuoka University
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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HOSODA Makoto
ATR Optical and Radio Communications Research Laboratories
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Mimura H
Shizuoka University
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OHTANI Naoki
ATR Adaptive Communications Research Laboratories
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Yokoo Kuniyoshi
Reseach Institute of Electrical Communication, Tohoku University,
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Mimura Hidenori
Reseach Institute of Electrical Communication, Tohoku University,
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