Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-15
著者
-
TAKAHASHI Jun
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Takahashi J
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Ohtani Noboru
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Kanaya Masatoshi
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
TAKAHASHI Jun
Fujitsu Kansai-Chubu Net-Tech Limited
-
Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Kanaya M
Ion Engineering Res. Inst. Corp. Osaka Jpn
-
Takahashi J
Fujitsu Kansai-chubu Net-tech Limited
関連論文
- Revised Results for the Band Properties of Black Phosphorus
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
- Mechanism of Molten KOH Etching of SiC Single Crystals : Comparative Study with Thermal Oxidation
- Morphotropic Phase Boundary and Dielectric Properties of V_2O_5-Containing Sr_xBa_Nb_2O_6 (0.2 ≤ x ≤ 0.4) Ferroelectrics
- Influence of the Seed Face Polarity on the Sublimation Growth of α-SiC
- Effect of Additives on Microstructure Development and Ferroelectric Properties of Sr_Ba_Nb_2O_6 Ceramics ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Quadrupled Compact Disk-Read Only Memory Fabricated Using UV Light Source
- Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane : Beam Induced Physics and Chemistry
- Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane
- Photoluminescence from High r-Electron Subbands and Intersubband Electroluminescence Using X-ΓCarrier Injection in a Simple GaAs/AlAs Superlattice
- Observation of the Infrared Emission from Simply Periodical GaAs/AlAs Superlattices
- Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
- Influence of Γ-X Resonance on Photocurrent-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
- Influence of Γ-X Resonance on Current-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
- Load Fluctuation-Based Dynamic File Allocation with Cost-Effective Mirror Function
- Reliability-Based Mirroring of Servers in Distributed Networks
- Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
- Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
- Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
- Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors