Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Takahashi J

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Urisu T

  Graduate Univ. For Advanced Studies Okazaki Jpn

• UTSUMI Yoshiharu

  Department of Electrical Engineering, Hiroshima University

• TAKAHASHI Jun-ichi

  Yokogawa Analytical Systems Inc.

• Utsumi Y

  Hitachi Ltd. Ibaraki Jpn

• Takahashi J

  Yokogawa Analytical Systems Inc.

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• Quadrupled Compact Disk-Read Only Memory Fabricated Using UV Light Source
• Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane : Beam Induced Physics and Chemistry
• Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane
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