Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane : Beam Induced Physics and Chemistry
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
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Takahashi J
Advanced Technology Research Laboratories Nippon Steel Corporation
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Urisu T
Graduate Univ. For Advanced Studies Okazaki Jpn
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UTSUMI Yoshiharu
Department of Electrical Engineering, Hiroshima University
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TAKAHASHI Jun-ichi
Yokogawa Analytical Systems Inc.
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Utsumi Y
Hitachi Ltd. Ibaraki Jpn
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Takahashi J
Yokogawa Analytical Systems Inc.
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