Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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Aigo Takashi
Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation
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Katsuno Masakazu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Yashiro Hirokatsu
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Ohtani Noboru
Advanced Technology Research Laboratories Nippon Steel Corporation
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FUJIMOTO Tatsuo
Advanced Technology Research Laboratories, Nippon Steel Corporation
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Fujimoto Tatsuo
Advanced Technology Research Laboratories Nippon Steel Corporation
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Kanaya M
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Yashiro Hirokatsu
Advanced Technology Research Laboratories Nippon Steel Corporation
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Aigo Takashi
Advanced Technology Research Laboratories Nippon Steel Corporation
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- Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
- Influence of Γ-X Resonance on Photocurrent-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
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- Measurement of Carrier Concentration at the GaAs-Si Interface in GaAs on Si by Raman Scattering
- Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- Electroluminescence in Undoped GaAs/AlAs Superlattice due to Avalanche Breakdown
- Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs-Si Interface
- Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
- Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Photocurrent and Photoluminescence Affected by Γ-X Electron Transfer in Type-I GaAs/AlAs Superlattices
- Formation Process of High-Field Domain in Superlattices Observed by Photoluminescence Spectra Branch
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
- Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
- Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
- Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates
- Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors