Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-11-15

著者

• TACHIKAWA Akiyoshi

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• IKEMATSU Yoichi

  Advanced Technology Laboratories, Nippon Steel Corp.

• Akiyama Masahiro

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Jono Aiji

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Aigo T

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Aigo Takashi

  Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation

• Sano Yoshiaki

  Semiconductor Technology Laboratory Research & Development Group Oki Electric Industry Co. Ltd.

• Sano Yoshiaki

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• MORITANI Akihiro

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• YAMAGISHI Chouho

  Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.

• Ikematsu Yoichi

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Moritani A

  Department Of Electronic And Control System Eng. Shimane University

• Yamagishi Chouho

  Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.

• Tachikawa A

  Nippon Steel Corp. Kanagawa Jpn

• Tachikawa Akiyoshi

  Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation

• Moritani Akihiro

  Advanced Semiconductor Materials and Devices Laboratories,

関連論文

• Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
• Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
• Enhanced Photovoltaic Response in Lead Lanthanum Zirconate-Titanate Ceramics with A-Site Deficient Composition for Photostrictor Application
• Intense visible light emission from Sr3Al2O6:Eu,Dy
• Bulk Photovoltaic Effect in Reducedo/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
• Nonstoichiometry Effects and Their Additivity on Anomalous Photovoltaic Efficiency in Lead Lanthanum Zirconate Titanate Ceramics
• Bulk Photovoltaic Effect in Reduced/Oxidized Lead Lanthanum Titanate Zirconate Ceramics
• Thermal Resistance and Electrornic Characteristics for High Electron Mobility Transistors Grown on Si and GaAs Substrates by Metal-Organic Chemical Vapor Deposition
• Tetragonal Lattice Distortion and Tensile Stress in GaAs Layers Grown on Si Substrates by MOCVD
• Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
• Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron Microscopy
• Transmission Electron Microscope Observation of Grown-in Defects Detected by Bright-Field Infrared-Laser Interferometer in Czochralski Silicon Crystals
• Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
• High Speed GaAs Digital Integrated Circuits
• Electroreflectance Study of Cd_xHg_Te
• Optical Constants of HgTe and HgSe
• Electroreflectance Measurements on Cd_xHg_Te
• A Study of GaAs Digital ICs on Si Substrates
• A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
• Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
• Sidegating Effects in Inverted AlGaAs / GaAs HEMT : Semiconductors and Semiconductor Devices
• Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
• Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
• Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures
• Influence of Crystal Originated Particles on Gate Oxide Breakdown
• Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
• Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
• Asymmetric Implantation Self-alignment Technique for GaAs MESFETs : Semiconductors and Semiconductors Devices
• Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
• Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
• Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate
• High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
• Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
• Measurement of Carrier Concentration at the GaAs-Si Interface in GaAs on Si by Raman Scattering
• Method to Obtain Low-Dislocation-Density Regions by Patterning with SiO_2 on GaAs/Si Followed by Annealing
• Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition
• The Influence of Growth Temperature and Thermal Annealing on the Stress in GaAs Layers Grown on Si Substrates : Condensed Matter
• Enhancement of the Breakdown Voltage of GaAs/Al_xGa_As Heterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
• Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
• Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs-Si Interface
• Role of TiAl_3 Fine Precipitate in Nucleation of the Primary Al Dendrite Phase during Solidification in Hot-Dip Zn-11%Al-3%Mg-0.2%Si Coated Steel Sheet
• Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
• Alloying Reaction of Aluminized Steel Sheet
• Electroreflectance of Anodized n-GaAs MOS
• Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors
• Electrostriction and Piezoelectricity of Thermally Grown SiO_2 and Sputtered SiO_2 Films
• Electroreflectance of Si-MOS
• Observation of Conductance Anomalies in Pb-SiO_2-Au Tunnel Junctions
• Behavior of Basal Plane Dislocations in Hexagonal Silicon Carbide Single Crystals Grown by Physical Vapor Transport
• Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition
• Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
• Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals
• Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates
• Influence of Screw Dislocations on DC Characteristics of 6H-SiC Metal-Semiconductor Field-Effect Transistors

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