Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-06-15
著者
-
Kajiyama K
Ion Engineering Res. Inst. Co. Osaka Jpn
-
Hamaguchi I
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Yano Takayuki
Advanced Technology Research Laboratories Nippon Steel Corporation:(present Address)technical Develo
-
KAJIYAMA Kenji
Electrical Communication Laboratories
-
Masui Shoichi
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Nakajima Tatsuo
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
Tachimori Masaharu
Advanced Technology Research Laboratories, Nippon Steel Corporation
-
HASHIGUCHI Yoshihiro
Advanced Technology Laboratories, Nippon Steel Corp.
-
IKEMATSU Yoichi
Advanced Technology Laboratories, Nippon Steel Corp.
-
HAMAGUCHI Isao
Electronics Research Laboratories, Nippon Steel Corp.
-
YANO Takayuki
Electronics Research Laboratories, Nippon Steel Corp.
-
NAKAJIMA Tatsuo
Electronics Research Laboratories, Nippon Steel Corp.
-
MASUI Shoichi
Electronics Research Laboratories, Nippon Steel Corp.
-
KAWAMURA Keisuke
Electronics Research Laboratories, Nippon Steel Corp.
-
TACHIMORI Masaharu
Electronics Research Laboratories, Nippon Steel Corp.
-
Nakajima Tetsuo
Photon Factory Kek Oho
-
Kawamura Ken-ichi
Hosono Transparent Electro-active Materials (team) Project Erato Japan Science And Technology Corpor
-
Kawamura K
Keio Univ. Yokohama
-
Masui S
Fujitsu Lab. Ltd. Kawasaki‐shi Jpn
-
Yano Takayuki
Advanced Technology Research Laboratories Nippon Steel Corp.
-
Kajiyama K
Ion Engineering Research Institute Co.
-
Nakajima T
Kanagawa Inst. Technol. Kanagawa Jpn
-
Nakajima Tatsuo
Advanced Technology Research Laboratories Nippon Steel Corporation
-
Ikematsu Y
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
Yano T
Sumitomo Cement Co. Ltd. Chiba
-
Hashiguchi Yoshihiro
Advanced Technology Laboratories Nippon Steel Corp.:nippon-steel Techno-research Corp.
-
Tachimori M
Advanced Technology Research Laboratories Nippon Steel Corporation
-
HASHIGUCHI Yoshihiro
Advanced Materials & Technology Research Laboratories, Nippon Steel Corporation
関連論文
- Ashing Properties in a Surface-Wave Mode Plasma with a Quartz Window
- Surface Wave Plasma Production Employing High Permittivity Material for Microwave Window : Nuclear Science, Plasmas, and Electric Discharges
- Ashing Properties in a Surface-Wave Mode Plasma with a High-Permittivity Alumina Window : Semiconductors
- Oxygen Microwave Plasma Density Enhancement by Surface Waves with a High-Permittivity Material Window
- Production of Large-Diameter Microwave Plasma with a High-Permittivity Material Window
- LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
- High Resolution X-Ray Scattering Study of the Anion Ordering Phase Transition of (TMTSF)_2ClO_4
- Surface Particle Analysis of SIMOX (Separation by IMplanted OXygen) Wafers
- Lateral-Epitaxy of CVD a-Si over SiO_2 Stripe-Area by Furnace-Annealing : LATE NEWS
- Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures
- Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation
- Applications of Wide-Band-Gap Materials for Optoelectronic Functional Devices Fabricated by a Pair of Interfering Femtosecond Laser Pulses
- Formation of Microstructure in SiO_2 Thin Film by a Femtosecond Laser Pulse
- Holographic Encoding of Permanent Gratings Embedded in Diamond by Two Beam Interference of a Single Femtosecond Near-Infrared Laser Pulse
- High Resolution X-Ray Study on Anomalous Diffraction Peak Shift in Dimerized Langmuir-Blodgett Superlattice Films
- X-Ray Resonance Magnetic Scattering
- Native Response of C. elegans Encoded in Its Neuron Network : Cross-Disciplinary Physics
- Does a Randomly Organized Electrical Circuit Function as a Neuronal System?
- Theory of Artificial Atoms and Molecules using Semiconductor Quantum Dots
- Linear Conductance through Parallel Quantum Dot Dimer below the Kondo Temperature
- Conductance through Quantum Dot Dimer Below the Kondo Temperature
- Studies of Charging Effects on Resonant Tunneling Diodes in Terms of Extended Friedel Sum Rule
- Phase Shifts, the Friedel Sum Rule, Resonant Tunneling through Asymmetric Potentials
- Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
- Properties of Hydrophone with Porous Piezoelectric Ceramics : Piezoelectrics
- Temperature Dependence of X-Ray Topographic Images Taken around Indentations of Si Single Crystals
- Transmission Electron Microscope Observation of Grown-in Defects Detected by Bright-Field Infrared-Laser Interferometer in Czochralski Silicon Crystals
- X-Ray Irradiation of YBa_2Cu_3O_y
- Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors (Special Issue on Quarter Micron Si Device and Process Technologies)
- Anomalous Phonon Drag Effect in Graphite
- Photoabsorption of Synthetic Silica Glass under ArF Excimer Laser Irradiation : Optical Properties of Condensed Matter
- Estimation of the Life of Synthetic Silica Glass under Long Time Irradiation by ArF Excimer Laser
- Effect of Strong Borrmann Absorption on X-Ray Fluorescence Yield Curves
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge
- Structure and Refractive Indices of Proton-Implanted LiNbO_3
- Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
- Influence of Crystal Originated Particles on Gate Oxide Breakdown
- Measurement of mean free paths for inelastic electron scattering of Si and SiO_2
- Energy-filtered electron diffraction and high-resolution electron microscopy on short-range ordered structure in GaAs_Sb_
- Thickness Measurement of Amorphous SiO_2 by EELS and Electron Holography
- Hall Resistance Anomalies and Quasi-Bound States within Hall Junctions
- Phase Relaxation and Non-Equilibrium Transport Properties through Multilevel Quantum Dot
- Effect of Na_2O Addition to Ag_2O-Doped Phosphate Glasses on Enhancement of Silver Particle Precipitation by Low-Energy Ion Irradiation
- Precipitation of Silver Particles in Glasses by Ion Irradiation
- Gas Mixing Effect on Ion Current Spectrum and Its Application to Optimize Implantation Source Gas Composition
- Multiple SOI Structure Fabricated by High Dose Oxygen Implantation and Epitaxial Growth
- Role of TiAl_3 Fine Precipitate in Nucleation of the Primary Al Dendrite Phase during Solidification in Hot-Dip Zn-11%Al-3%Mg-0.2%Si Coated Steel Sheet
- Electron Transport in Low-Stage Graphite-ICl Intercalation Compounds
- C-Axis Conduction in Low Stage Graphite Intercalation Compounds with Iodine Monochrolide
- グラファイトの熱磁気効果測定について(ノ-ト)〔英文〕
- Alloying Reaction of Aluminized Steel Sheet
- Zinc Diffusion in In_xGa_As
- Galvanomagnetic Properties of Graphite Intercalated with Nitrate
- Temperature Dependence of Galvanomagnetic Properties of Graphite between 4.2 K and 298 K
- Effect of Electron-and Photon Lifetime Ratio on Relaxation Oscillation in Laser Diodes
- Pulse Mode Operation for Piezoelectric Ceramic Actuator : P: Pyroelectrics
- Multilayer Piezoelectric Ceramic Actuator with Varying Thickness Layers : V: Piezoelectrics
- Depth Profiling of Hg_Cd_xTe by Secondary Ion Mass Spectrometry:Detecting CsX^+ with Cs^+ Ion Beam
- Internal Electrode Piezoelectric Ceramic Actuator : V: PIZOELECTRIC VIBRATOR
- Comment on the Equilibrium Composition Relation in "Vapor Growth of InAs_xP_"
- The In-Ga-P Ternary Phase Diagram
- Optical Thickness Evaluation of Separation by IMplanted OXygen (SIMOX) Wafers
- Applications of Wide-Band-Gap Materials for Optoelectronic Functional Devices Fabricated by a Pair of Interfering Femtosecond Laser Pulses
- Determination of Anomalous Scattering Factor by Using Transmitted Rocking Curves near the Absorption Edge