Surface Particle Analysis of SIMOX (Separation by IMplanted OXygen) Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Ohtsuka S
Advanced Technology Research Laboratories Nippon Steel Corp.
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KAJIYAMA Kenji
Advanced Technology Research Laboratories, Nippon Steel Corp.
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OHTSUKA Susumu
Advanced Technology Research Laboratories, Nippon Steel Corp.
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MORIKAWA Yoji
Advanced Technology Research Laboratories, Nippon Steel Corp.
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YANO Takayuki
Advanced Technology Research Laboratories, Nippon Steel Corp.
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Yano T
Advanced Technology Research Laboratories Nippon Steel Corp.
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Yano Takayuki
Advanced Technology Research Laboratories Nippon Steel Corp.
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Morikawa Y
Institute For Semiconductor Technologies Ulvac Inc.
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Morikawa Yoji
Advanced Technology Research Laboratories Nippon Steel Corporation
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Ohtsuka Susumu
Advanced Technology Research Laboratories Nippon Steel Corp.
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Kajiyama Kenji
Advanced Technology Research Laboratories Nippon Steel Corp.:(present Address) Ion Engineering Resea
関連論文
- Surface Particle Analysis of SIMOX (Separation by IMplanted OXygen) Wafers
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures
- Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation
- Control of Surface Reaction on Highly Accurate Low-k Methylsilsesquioxane Etching Process : Nuclear Science, Plasmas, and Electric Discharges
- Magnetic Neutral Loop Discharge (NLD) Plasma and Application to SiO_2 Etching Process
- Effect of Na_2O Addition to Ag_2O-Doped Phosphate Glasses on Enhancement of Silver Particle Precipitation by Low-Energy Ion Irradiation
- Precipitation of Silver Particles in Glasses by Ion Irradiation
- Measurement of Carrier Concentration at the GaAs-Si Interface in GaAs on Si by Raman Scattering
- Optical Thickness Evaluation of Separation by IMplanted OXygen (SIMOX) Wafers