Measurement of Carrier Concentration at the GaAs-Si Interface in GaAs on Si by Raman Scattering

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概要

• 論文の詳細を見る

• The free carrier concentration in GaAs-on-Si was measured by Raman scattering at the GaAs back face which is revealed by etching the Si substrate. Asymmetric Raman spectra attributed to the coupled plasmon-longitudinal optical (LO) phonon mode (L+) observed in the range of 400 to 700 cm^<-1> indicate that an electron concentration greater than 1.6 × 10^<18> cm^<-3> is induced by incorporation of Si atoms into the GaAs layer at the Si-GaAs interface in metal-organic chemical vapor deposition (MOCVD) grown GaAs-on-Si's at 700℃ for 15 min.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• TACHIKAWA Akiyoshi

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• MORIKAWA Yoji

  Advanced Technology Research Laboratories, Nippon Steel Corp.

• Jono Aiji

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Aigo T

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Aigo Takashi

  Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation

• Morikawa Yoji

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Futagi Toshiro

  Advanced Technology Research Laboratories Nippon Steel Corporation

• MORITANI Akihiro

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• Moritani A

  Department Of Electronic And Control System Eng. Shimane University

• Tachikawa A

  Nippon Steel Corp. Kanagawa Jpn

• Tachikawa Akiyoshi

  Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation

• Moritani Akihiro

  Advanced Semiconductor Materials and Devices Laboratories,

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