Electrostriction and Piezoelectricity of Thermally Grown SiO_2 and Sputtered SiO_2 Films
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概要
- 論文の詳細を見る
It is found that vibrating phenomena in a St MOS sample and arm Al- sputtered SiO_2-Al-Si sample take place in a similar manner with a piezoelectric bimorph when an alternative electric field is applied to the samples. These vibrating phenomena are induced by stress fields which are generated on the SiO_2 film. We report a measurement technique of the magnitude of this stress with the use of an optical method. It is shown that this stress field in thermally grown SiO_2 and sputtered SiO_2 is induced by both the electrostrictive and piezoelectric effect. We have also observed the induced voltage which agrees with the expected value from the measured electrostrictive and piezoelectric tensor element when an external mechanical stress is applied to the SiO_2 film of the MOS sample.
- 社団法人応用物理学会の論文
- 1976-11-05
著者
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Nakai J
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Nakai Junkichi
Department Of Electronics Faculty Of Engineering Osaka University
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Nakai Junkichi
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Moritani A
Department Of Electronic And Control System Eng. Shimane University
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Misawa Kiyotoshi
Department Of Electronics Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronics Faculty Of Engineering Osaka University
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Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
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NAKAI Junkichi
Department of Electronics, Faculty of Engineering, Osaka University
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