Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals

概要

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The electric field effect on the dielectric function in highly anisotropic crystals is calculated within the weak field approximation at a minimum threshold and with the tight binding approximation for the energy band structure along the anisotropic axis (z). It has been found that the line shape of ？ε_2(ω,F) can be defined by the ratio of the band width of the interband energy along the anisotropic axis to the characteristic electro-optic energy hΩ for the field direction at the band extrema. When the ratio is much smaller than unity the line shape shows two dimensional character. When the ratio is much greater than unity the line shape represents three dimensional character. the line shapes of ？ε_2(ω,F) for F⊥z and F//z are numerically calculated for several values of the ratio. The present results can be applied to analyze the electroreflectance spectra in layer semiconductors such as GaTe, GaSe and GaS.
社団法人日本物理学会の論文
1974-01-15