Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
スポンサーリンク
概要
- 論文の詳細を見る
We propose a nonlocal impact ionization model applicable for the drain region where electric field increases exponentially. It is expressed as a function of an electric field and a characteristic length which is determined by a thickness of gate oxide and a source/drain junction depth. An analytical substrate current model for n-MOSFET is also derived from the new nonlocal impact ionization model. The model well explains the reason why the theoretical characteristic length differs from empirical expressions used in a pseudo two-dimensional model for MOSFET's. The nonlocal impact ionization model implemented in a device simulator demonstrates that the new model can predict substrate current correctly in the framework of drift-diffusion model.
- 社団法人電子情報通信学会の論文
- 1995-03-25
著者
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
TANIGUCHI Kenji
Faculty of Engineering, Osaka University
-
Hamaguchi Chihiro
Faculty of Engineering, Osaka University
-
KUNIKIYO Tatsuya
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
Hamaguchi Chihiro
Faculty Of Engineering Osaka University
-
SONODA Ken-ichiro
Department of Electronic Engineering, Osaka University
-
YAMAJI Mitsuru
Department of Electronic Engineering, Osaka University
-
Sonoda Ken-ichiro
Faculty of Engineering, Osaka University
-
Yamaji Mitsuru
Faculty of Engineering, Osaka University
-
Yamaji M
Department Of Electronic Engineering Osaka University
-
Kunikiyo T
Mitsubishi Electric Corp. Itami‐shi Jpn
-
Kunikiyo Tatsuya
Ulsi Development Center Mitsubishi Electric Corporation
-
Sonoda K
Department Of Electronic Engineering Osaka University
関連論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Magnetophonon Effect in p-InSb
- Magnetophonon Resonance and Fourier Analysis in n-GaAs
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Resonant Brillouin Scattering in Opaque and Transparent Regions of CdS
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
- The Role of the Effective Mass in the Hot-Electron Magnetophonon Resonance in n-Type Germanium
- Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
- Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Self-consistent Determination of the Confinement Potential in Various Etched Quantum Wire Structures
- A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
- Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
- Resonant Brillouin Scattering in CdS (Selected Topics in Semiconductor Physics) -- (Light Scattering)
- Study of Resonant Brillouin Scattering in ZnSe by Injected Acoustic Waves
- Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe
- Resonant Brillouin Scattering by LA Phonons in CdS
- A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique
- Degradation Mechanisms of Thin Film SIMOX SOI-MOSFET Characteristics : Optical and Electrical Evaluation (Special Issue on Quarter Micron Si Device and Process Technologies)
- Hot-Electron Magnetophonon Effect in n-InSb at 77 K Investigated by Magnetic Field Modulation Technique
- Injection of Acoustic Domains into Semiconductors
- Electroabsorption of GaS around the Indirect Edge
- Physical Models for Deep Submicron Device Simulation
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
- A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
- Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer
- Fine structures in Optical Absorption Spectra of MnO
- Some Properties of Silica Film Made by RF Glow Discharge Sputtering
- A Proposal of Single Quantum Well Transistor (SQWT) : Self-Consistent Calculations of 2D Electrons in a Quantum Well with External Voltage
- Resonant Forbidden Brillouin Scattering in CdS