Magnetophonon Resonance and Fourier Analysis in n-GaAs
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概要
- 論文の詳細を見る
With the use of magnetic field modulation technique up to eighteen magneto-phonon peaks are observed in the transverse and longitudinal magnetoresistance ofhigh purity epitaxial n-GaAs. Fourier analysis reveals the second harmoniccomponent resulting in a sharpening of the oscillatory structure in the transversemagnetoresistance and extrema associated with the two LO phonon process inthe longitudinal magnetoresistance in addition to the ordinary magnetophononseries. Two methods are described to obtain the damping factor 7 which is foundto be 0.63 from the Fourier analysis and 0.60 from the method described in thisPIPCF for the specimen With the highest mobility (l.7Xl0'C[11'/V?S) at 77K.The temperature dependence of ] for the high purity n-GaAs exhibits a variationT"" at low temperatures, which indicates an importance of the band failing effectfor the damping process. The effective mass is determined to be m' =O.O6S2mg at 77 K.
- 社団法人日本物理学会の論文
- 1979-08-15
著者
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Kasai Kazumi
Department Of Electronics Faculty Of Engineering Osaka University:fujitsu Laboratories
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Kasai Kazumi
Department Of Electronics Faculty Of Engineering Osaka University
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SHIMOMAE Koichi
Department of Electronics,Faculty of Engineering,Osaka University
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SENDA Kohji
Department of Electronics,Faculty of Engineering,Osaka University
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Senda Kohji
Department Of Electronics Faculty Of Engineering Osaka University:research Laboratory Matsushita Ele
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Shimomae Koichi
Department Of Electronics Faculty Of Engineering Osaka University
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