Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Matsuoka Toshimasa

  Department Of Electronic Engineering Osaka University

• TAGUCHI Shigenari

  Department of Electronic Engineering, Osaka University

• KAKIMOTO Seizo

  Central Research Laboratories, Sharp Corporation

• UDA Keiichiro

  Central Research Laboratories, Sharp Corporation

• Kakimoto S

  Mitsubishi Electric Corp. Hyogo Jpn

• Kakimoto Seizo

  Advanced Technology Research Laboratories Sharp Corporation

• Kakimoto Seizo

  Central Research Laboratories Sharp Corporation

• Uda Keiichiro

  Central Research Laboratories Sharp Corporation

• Sugimoto Kazuo

  Advanced Technology Research Laboratories Sharp Corporation

• Taguchi S

  Tanaka Kikinzoku Kogyo K. K. Atugi-shi Jpn

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Matsuoka Toshimasa

  Department of Electrical, Electronic and Information Engineering, Osaka University

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