Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-12-15

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Kamakura Y

  Department Of Electronics And Information Systems Osaka University

• Kamakura Yoshinari

  Department Of Electronics And Information Systems Osaka University

• Kamakura Yoshinari

  Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University

• HOSOI Takuji

  Department of Electronics and Information Systems, Osaka University

• Hosoi Takuji

  Department Of Electronics And Information Systems Osaka University

• Taniguchi Kenji

  Department Of Electronics And Information Systems Osaka University

• Taniguchi K

  Kyushu Univ.

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

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