HOSOI Takuji | Department of Electronics and Information Systems, Osaka University
スポンサーリンク
概要
関連著者
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HOSOI Takuji
Department of Electronics and Information Systems, Osaka University
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Kamakura Y
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University
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Taniguchi Kenji
Department Of Electronics And Information Systems Osaka University
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Taniguchi K
Kyushu Univ.
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Morikawa Shuichi
Department of Cardiology Kyoto National Hospital
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Morikawa Shuichi
Department Of Electronics And Information Systems Osaka University
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Yoshimoto Chiaki
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Gastrointestinal Surgery Faculty Of Medicine Fukuoka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Gastroenterological Surgery Faculty Of Medicine Fukuoka University
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Kamakura Yoshinari
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
著作論文
- Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth