Hosoi Takuji | Department Of Electronics And Information Systems Osaka University
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概要
関連著者
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Hosoi Takuji
Department Of Electronics And Information Systems Osaka University
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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HOSOI Takuji
Department of Electronics and Information Systems, Osaka University
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Yoshimoto Chiaki
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kutsuki Katsuhiro
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Okamoto Gaku
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Kamakura Y
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University
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SHIMURA Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University
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Taniguchi Kenji
Department Of Electronics And Information Systems Osaka University
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Taniguchi K
Kyushu Univ.
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Saeki Masayuki
Department Of Civil Engineering Faculty Of Science And Technology Tokyo University Of Science
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Ogiwara Shimpei
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Graduate School Of Engineering Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Shimura Takayoshi
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ogawa Shingo
Toray Research Center Inc., Otsu 520-8567, Japan
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Yamamoto Takashi
Toray Research Center Inc., Otsu 520-8567, Japan
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Teraoka Yuden
Japan Atomic Energy Agency
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YOSHIGOE Akitaka
Japan Atomic Energy Agency
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Kita Koji
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Morikawa Shuichi
Department of Cardiology Kyoto National Hospital
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WATANABE Heiji
Department of Precision Science and Technology, Osaka University
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Morikawa Shuichi
Department Of Electronics And Information Systems Osaka University
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Hosoi Takuji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Hashimoto Tatsuya
Department Of Gastrointestinal Surgery Faculty Of Medicine Fukuoka University
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YAMAMOTO Takashi
Toray Research Center, Inc.
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Yugami Jiro
Renesas Technology Corp.
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Minami Takashi
Canon Anelva Corporation
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KOSUDA Motomu
Canon ANELVA Corporation
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Uda Tsuyoshi
Advanced Research Laboratory Hitachi Ltd.
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Hashimoto Tatsuya
Department Of Gastroenterological Surgery Faculty Of Medicine Fukuoka University
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Teraoka Yuden
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
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Kitano Naomu
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Horie Shinya
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kawahara Takaaki
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Nishida Yukio
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Sakashita Shinsuke
RENESAS Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yugami Jiro
Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-005, Japan
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Arimura Hiroaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ogawa Shingo
Toray Research Center, Inc., Otsu 520-8567, Japan
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Yoshigoe Akitaka
Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan
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Hideshima Iori
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Saeki Masayuki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamamoto Takashi
Toray Research Center, Inc., Otsu 520-8567, Japan
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Kamakura Yoshinari
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshimoto Chiaki
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Uda Tsuyoshi
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Tsuji Jun-ichi
Toray Research Center Inc., Otsu 520-8567, Japan
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Tagami Katsunori
AdvanceSoft Corporation, Minato, Tokyo 107-0052, Japan
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Ogiwara Shimpei
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kita Koji
Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
著作論文
- Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
- Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
- Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
- Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
- Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
- La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
- Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth