Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-06-25

著者

• WATANABE Heiji

  Department of Precision Science and Technology, Osaka University

• SHIMURA Takayoshi

  Department of Material and Life Science, Graduate School of Engineering, Osaka University

• HOSOI Takuji

  Department of Electronics and Information Systems, Osaka University

• Hosoi Takuji

  Department Of Electronics And Information Systems Osaka University

• Yoshimoto Chiaki

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Hashimoto Tatsuya

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Hashimoto Tatsuya

  Department Of Gastrointestinal Surgery Faculty Of Medicine Fukuoka University

• Watanabe Heiji

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Shimura Takayoshi

  Graduate School Of Engineering Osaka University

• Shimura Takayoshi

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Hashimoto Tatsuya

  Department Of Gastroenterological Surgery Faculty Of Medicine Fukuoka University

関連論文

• Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
• High-resolution RBS analysis of Si-dielectrics interfaces
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
• Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
• In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET
• Laparoscopic Repair of a Ventral and Incisional Hernia (LRVIH) via Endoscopic Dome Surgery by Sitting Position (EDSS)
• Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
• Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation
• Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture
• Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
• Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
• High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
• Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
• Characterization of SiGe Layer during Ge Condensation Process by X-ray Diffraction Methods
• Fabrication of Silicon Utilizing Mechanochemical Local Oxidation by Diamond Tip Sliding : Surfaces, Interfaces, and Films
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
• Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
• Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth
• Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
• Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
• Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
• Charge Neutralization Using Focused 500 eV Electron Beam in Focused Ion Beam System
• Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
• Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
• Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
• Clinical benefit of Totally Laparoscopic over Laparoscopically Assisted Distal Gastrectomy with Roux-en-Y Reconstruction for Early Gastric Cancer
• Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
• Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-$k$ Gate Stacks
• Comprehensive Study of the X-Ray Photoelectron Spectroscopy Peak Shift of La-Incorporated Hf Oxide for Gate Dielectrics
• La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
• Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
• Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
• Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping
• Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
• Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
• Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
• Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
• Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
• SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
• Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
• A FUSED PELVIC KIDNEY
• Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth

もっと見る 閉じる

スポンサーリンク