Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
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概要
- 論文の詳細を見る
The impact of TiN deposition on thin high-$k$ (HfO2 and HfSiON) films formed on Si substrates was studied using monoenergetic positron beams. For the predeposition sample, the positrons implanted into Si diffuse toward the high-$k$/Si interface under the influence of the electric field, suggesting the presence of negative charges in the high-$k$ films. After TiN was deposited on HfO2, positive charges were introduced at the TiN/HfO2 interface, which were associated with the incorporation of nitride into HfO2, resulting in the formation of positively charged oxygen vacancies (VOs). From the isochronal annealing experiments for TiN/HfSiON/Si, it was found that positively charged defects (such as VO) were introduced into HfSiON after annealing at 700–900 °C. These defects were introduced by the interaction between TiN and HfSiON, resulting in the formation of polycrystalline TiO2 at the interface. The positively charged defects were annealed out at 1100 °C, but the dielectric properties of HfSiON degraded.
- 2007-05-30
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kamiyama Satoshi
Semiconductor Leading Edge Technologies Inc.
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Watanabe Heiji
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Ito Kenichi
Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamada Keisaku
Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo 16-0041, Japan
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Naito Tatsuya
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Otsuka Takashi
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Akasaka Yasushi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Miyazaki Seiichi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Ito Kenichi
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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