Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
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概要
- 論文の詳細を見る
Typical p-metals show similar effective work functions close to p+ polycrystalline silicon (poly-Si) pinning position irrespective of materials after high-temperature process. We found that this phenomenon can be explained by the modified $V$o model taking into account the effect of Si substrate. Oxygen absorption by Si substrate and subsequent electron transfer to metal electrode clearly explain the p-metal Fermi level pinning as well as p+ poly-Si pinning. In addition, unsuppressed Fermi level pinning by insertion of barrier layer at p+ poly-Si/barrier layer/high-$k$ gate stack, which is one of the open issues concerning p+ poly-Si pinning, has the same overall reaction scheme. The modified model also consistently explains this phenomenon.
- Japan Society of Applied Physicsの論文
- 2006-12-25
著者
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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OGAWA Osamu
Semiconductor Leading Edge Technologies, Inc. (Selete)
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AMIAKA Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kasuya Tooru
Semiconductor Leading Edge Technologies Inc. (selete)
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Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
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Lee Myoungbum
Semiconductor Leading Edge Technologies Inc. (selete)
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Nakamura Genji
Semiconductor Leading Edge Technologies Inc. (selete)
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Watanabe Heiji
Graduate School Of Engineering Osaka University
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Nakamura Kunio
Semiconductor Leading Edge Technologies Inc.
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Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Lee Myoungbum
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Nakamura Genji
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Kasuya Tooru
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Amiaka Toshio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies, Inc. (Selete), Tsukuba, Ibaraki 305-8569, Japan
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Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Shiraishi Kenji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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