Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-12-25

著者

• Shiraishi Kenji

  Graduate School of Pure and Applied Science, University of Tsukuba

• Nakajima Kaoru

  Dep. Of Micro Engineering Kyoto Univ.

• Umezawa Naoto

  National Inst. For Materials Sci. Ibaraki Jpn

• NARA Yasuo

  Semiconductor Leading Edge Technologies, Inc.

• WATANABE Heiji

  Graduate School of Engineering, Osaka University

• AKASAKA Yasushi

  Semiconductor Leading Edge Technologies Inc.

• OOTSUKA Fumio

  Semiconductor Leading Edge Technologies Inc.

• NAKAMURA Genji

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• UMEZAWA Naoto

  Advanced Electronic Materials Center, National Institute for Materials Science

• YAMABE Kikuo

  Graduate School of Pure and Applied Sciences, University of Tsukuba

• OGAWA Osamu

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• LEE Myoungbum

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• AMIAKA Toshio

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• KASUYA Tooru

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• CHIKYOW Toyohiro

  Advanced Electronic Materials Center, National Institute for Materials Science

• NAKAMURA Kunio

  Semiconductor Leading Edge Technologies, Inc. (Selete)

• Yamamoto K

  Kaneka Corporation

• Kasuya Tooru

  Semiconductor Leading Edge Technologies Inc. (selete)

• Arikado Tsunetoshi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Lee Myoungbum

  Semiconductor Leading Edge Technologies Inc. (selete)

• Nakamura Genji

  Semiconductor Leading Edge Technologies Inc. (selete)

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