Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON

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概要

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• Silicon dangling bonds (Si-DBs) in HfSiOx have been studied using first-principles calculations. Interestingly, our computational result revealed that the Si-DB-related gap state in HfSiOx locates in a much lower energy region than that in SiOx. This is because Hf atoms enhance the ionic character of the HfSiOx film, which in turn induces a positive charge at the Si site. We consider that the low-lying Si-DB level, which is now very near the N 2p state, contributes to the formation of strong Si–N bonds in HfSiON. The lower shift of the Si-DB level upon cation metal inclusion can be useful information not only for improving the electric properties of high-$k$ gate stacks but also for developing prominent silicon–oxide–nitride–oxide–silicon (SONOS) nonvolatile memories where controllability of the charge trap level is a crucial issue.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Inumiya Seiji

  Semiconductor Company Toshiba Corporation

• AKASAKA Yasushi

  Semiconductor Leading Edge Technologies Inc.

• YAMABE Kikuo

  Graduate School of Pure and Applied Sciences, University of Tsukuba

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Umezawa Naoto

  Advanced Electronic Materials Center National Institute For Materials Science

• Chikyow Toyohiro

  Advanced Electronic Materials Center National Institute For Materials Science (nims)

• Ohno Takahisa

  Computational Materials Science Center National Institute For Materials Science

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Yamada Keisaku

  Nanotechnology Research Laboratories Waseda University

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Inumiya Seiji

  Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan

• Uedono Akira

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Hasunuma Ryu

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Momida Hiroyoshi

  Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

• Ohmori Kenji

  Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Hasunuma Ryu

  Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

• Uedono Akira

  Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Yamada Keisaku

  Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan

• Chikyow Toyohiro

  Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Akasaka Yasushi

  Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan

• Hasunuma Ryu

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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