Properties of Silicon-Oxygen Alloy Films Prepared from SiH_4+CO_2 Gas Mixture
スポンサーリンク
概要
- 論文の詳細を見る
Measurement of electrical properties, etch rates in HF (49%) and HF-HNO_3 (49% HF:63% HNO_3=1:20) solutions and X-ray photoemission spectra are reported for amorphous silicon-oxygen alloy films (a-SiO_x:H) prepared by r. f. glow discharge decomposition of a SiH_4-CO_2 gas mixture. Activated band conduction is observed in the temperature range of 324-424 K. Though the addition of oxygen causes a decrease in the conductivity, the activation energy for conduction remains at a constant value of around 1.0 eV in the films with oxygen content x from 0.17 to 0.5. The broadening toward the high binding energy of the Si-2p core level in X-ray photoemission spectra with oxygen content is explained by the effects of oxygen atoms incorporated into the films.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
-
Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
-
Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
-
Kumano Masafumi
Ricoh Research Institute Of General Electronics
-
Yamamoto K
Kaneka Corporation
-
Watanabe Hideo
Sendai Radio Technical College
-
HAGA Koichi
RICOH Research Institute of General Electronics
-
MURAKAMI Akishige
RICOH Research Institute of General Electronics
-
Haga K
Sumitomo Electric Industries Ltd. Yokohama
-
YAMAMOTO Kenji
RICOH Research Institute of General Electronics
-
Watanabe Hideo
Sendai National College Of Technology
関連論文
- Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
- The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- High-resolution RBS analysis of Si-dielectrics interfaces
- Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Influence of Biased Electrode on Plasma Confinement in the Tohoku University Heliac
- Particle Transport Study with an Electron Beam in the Tohoku University Heliac
- Potential Structure Measurements of ECH Plasma in a Helical Axis Stellarator
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Electronic and Structural Requirements for Metabolic Activation of Butylated Hydroxytoluene Analogs to Their Quinone Methides, Intermediates Responsible for Lung Toxicity in Mice
- METABOLIC ACTIVATION AND GLUTATHIONE CONJUGATION OF BUTYLATED HYDROXYTOLUENE
- IDENTIFICATION OF NEW METABOLITES OF BUTYLATED HYDROXYTOLUENE (BHT) IN RATS
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds
- Depolarization Characteristics in Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Characteristics of Bismuth Layered SrBi_2Ta_2O_9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O_3
- Origin of Depolarization in Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Characteristic Change Due to Polarization Fatigue of Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Polarization Fatigue Characteristics of Sol-Get Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Evaluation of Imprint Properties in Sol-Get Ferroelectric Pb(ZrTi)O_3 Thin-Film Capacitors
- Spectral Characteristics of Thin-Film Stacked-Tandem Solar Modules
- Optimization of Device Design for Thin-Film Stacked Tandem Solar Modules in Terms of Outdoor Performance
- Challenge of Near-Field Recording beyond 50.4 Gbit/in^2
- Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
- Miniature Two-Axis Actuator for High-Data-Transfer-Rate Optical Data Storage System
- Cross-talk Canceller for Wobbling Signal
- Near-Field Optical Recording on a Pre-Grooved Phase-Change Disk in the Blue-Violet
- Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
- 25 GB Read-Only Disk System using the Two-Dimensional Equalizer
- Near-Field Phase-Change Optical Recording of 1.36 Numerical Aperture
- Optical Disk Recording Using a GaN Blue-Violet Laser Diode
- Signal Processing for 15/27 GB Read-Only Disk System
- New Equalizer to Improve Signal-to-Noise Ratio
- TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Optical Confinement Effect for below 5 μm Thin Film Poly-Si Solar Cell on Glass Substrate
- Structure of Trimer-Type Isocyanate Hardening Agents and Reactivity of Their Isocyanate Group
- Estimation of Reactivity of Isocyanate Groups by Calculation and Magnetochemical Measurement
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Polymer-C_ Composite with Ferromagnetism
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors
- Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials)
- Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Spectral Effects of a Single-Junction Amorphous Silicon Solar Cell on Outdoor Performance
- Layer-by-Layer Oxidation of Si(001) Surfaces
- Thin-Film Polycrystalline Si Solar Cell on Glass Substrate Fabricated by a Novel Low Temperature Process
- Precise Fabrication Technique of UHF SAW Al Electrodes and Leaky SAW Propagation Characteristics on 36°Y-X LiTaO_3 : SAW and Communication Devices
- Precise Measurement of Leaky SAW Velocity on LiTaO_3-36° YX Substrates Using a Comb-Filter Method : SAW and Communication Devices
- Frequency Spectrum of Fluctuations Near a Rational Surface in a Toroidal Heliac
- A New Capacitive/Resistive Probe Method for Studying Magnetic Surfaces
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp : Lithography Technology
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp
- Asymmetric Ultrasonic Pulse Radiation Using Electromagnetic-Induction Transducer and PZT(Pb(Zr-Ti)O_3) Transducer with Wave Synthesis Method
- Electrical Resistivity, Critical Current and Crystal Orientation of the Sintered Y-Ba-Cu-O Compounds
- Tunneling Spectroseopy of Y-Ba-Cu-O Compound
- Superconductivity of Y-Ba-Cu-O Compound above Liquid Nitrogen Temperature
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Detection and Printability of Shifter Defects in Phase-Shifting Masks : Photolithography
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask : Photolithography
- Detection and Printability of Shifter Defects in Phase-Shifting Masks
- Pattern Transfer Characteristics of Transparent Phase Shifting Mask
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer : Resist Material and Process
- A DUV-Defined-Negative Resist/EB-Defined-positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate : Lithography Technology
- A DUV-Defined-Negative Resist/EB-Defined-Positive Resist Two-Layer Resist System for the Fabrication of T-Shaped Gate
- Thermodynamics of Development Process of Positive Resists in Binary Mixed Developer
- Effects of rf Power and Substrate Temperature on Properties of a-SiN_x:H Films Prepared by Glow-Discharge of SiH_4-N_2-H_2
- Plasma-Enhanced Deposition of Silicon Nitride from SiH_4-N_2 Mixture
- Properties of Amorphous Films Prepared from SiH_4-N_2-H_2 Gas Mixture
- 0.8-Numerical-Aperture Two-Element Objective Lens for the Optical Disk
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- Properties of Photosensor with Amorphous Si:H/SiO_x:H Double-Layer Structure
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System : Micro/nanofabrication and Devices
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
- Properties of Silicon-Oxygen Alloy Films Prepared from SiH_4+CO_2 Gas Mixture
- A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor
- Wide Optical-Gap a-Si:O:H Films Prepared from SiH_4-CO_2 Gas Mixture
- Analysis of Composition of a-Si_Ge_x Alloy Films
- Optical Properties of Plasma-Deposited Silicon-Oxygen Alloy Films