Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile

スポンサーリンク

概要

著者

関連論文

Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

もっと見る

スポンサーリンク