Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
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概要
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Thin Hf0.3Al0.7Ox films fabricated by an atomic-layer-deposition technique were characterized using monoenergetic positron beams. From the measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons for 3- and 7-nm-thick HfAlOx films deposited on SiON(0.9 nm)/Si, it was found that positrons in the HfAlOx films annihilate from the trapped state by open spaces that exist intrinsically in their amorphous structure. The line-shape parameter $S$ and the positron lifetime corresponding to the HfAlOx films decreased with increasing oxygen content (0.004–1%) in the annealing atmosphere. This fact was attributed to the shrinkage of the open spaces due to the change in the matrix structure of amorphous HfAlOx. The increase in oxygen content was also found to decrease the transient current of $n^{+}$-polycrystalline-Si/HfAlOx/SiON/Si. The decrease in the mean size of the open spaces and the resultant hardening of the matrix structure are considered to suppress the dielectric polarization of HfAlOx.
- 2004-11-15
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Yamada Keisaku
Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
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Higuchi Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
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