Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
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概要
- 論文の詳細を見る
Time-dependent leakage currents are investigated under high voltage stress to BaSrTiO_3 thin film at high temperatures. Under the application of negative gate stress, the leakage current increases once and decreases after reaching the maximum point. Under the application of positive gate stress, the leakage current steeply increases after a given time. Based on current-voltage characteristics observed following the application of positive and negative stresses and current-time characteristics at low voltage, the degradation mechanism is discussed.
- 社団法人応用物理学会の論文
- 1998-10-01
著者
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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Imai Keitaro
Microelectronics Engineering Laboratory Toshiba Corporation:ibm
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Imai Keitaro
Microelectronics Engineering Laboratory Advanced Microelectronics Center Toshiba Corporation
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Materials Science University Of Tsukuba
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INOMOTO Minoru
Institute of Materials Science, University of Tsukuba
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Inomoto Minoru
Institute Of Materials Science University Of Tsukuba
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