Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
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概要
- 論文の詳細を見る
Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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Oeda Hitoshi
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Hojo Daisuke
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Oeda Hitoshi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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