Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors

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Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
Selective Growth of Cu Nanowires on Si(111) Substrates
Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
Leakage Current Distribution of Cu-Contaminated Thin SiO_2
In Situ Measurements of Drastic Change of Electrical Conductivity and Structure upon Electrochemical Lithium Intercalation in Pyrolyzed Poly(hydrazocarbonyl-1-4-phenylenecarbonyl) Film
Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Helical Type Kicker for Stochastic Momentum Cooling
Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films
Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
Leakage Current Distribution of Cu-Contaminated Thin SiO2
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond $ p$–$i$–$n$ Junction
Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water

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