Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State

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概要

• 論文の詳細を見る

• We have investigated about the origin of hole current of high-$k$/metal gate stacks in an inversion state. There are several candidates for the origin of hole current in n-type metal oxide semiconductor devices in the inversion state. These include impact ionization in the metal gate or in gate dielectrics, plasmon emission from the metal gate and valence electron from the Si-substrate. Following the breakdown of HfSiON/TaSi gate stacks, we have observed ohmic electron and hole currents. Although ohmic electron currents cannot be accelerated and never result in impact ionization or plasmon emission, we have determined the origin of hole current to be due to the infection of valence electrons from Si-substrate.

• Japan Society of Applied Physicsの論文
• 2007-11-25

著者

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Yamabe Kikuo

  Institute Of Applied Physics University Of Tsukuba

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Sato Motoyuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc.

• Yamabe Kikuo

  Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 306-8571, Japan

• Ohji Yuzuru

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

• Nara Yasuo

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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