Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-05-01
著者
-
Takata M
Nagaoka Univ. Technology Niigata
-
Maeda T
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
-
Maeda T
Electrotechnical Lab. Tskuba Jpn
-
YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
-
MAEDA Tatsuro
Electron Devices Division, Electrotechnical Laboratory
-
Maeda Toru
Department Of Material Science Graduate School Of Engineering Tohoku Uniiversity
-
Maeda T
Storage Technology Research Center Research & Development Group Hitachi Ltd.
-
Maeda T
Electrotechnical Lab. Ibaraki Jpn
-
Maeda Tatsuro
Electrotechnical Laboratory
-
Yamabe K
Institute Of Applied Physics University Of Tsukuba
-
Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
-
SHIMOYAMA Kazuo
Institute of Applied Physics, University of Tsukuba
-
KUBO Kousuke
Institute of Applied Physics, University of Tsukuba
-
Kubo Kousuke
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
-
Shimoyama K
Univ. Tsukuba Ibaraki Jpn
-
Shimoyama Kazuo
Institute Of Applied Physics University Of Tsukuba:center For Tara University Of Tsukuba
関連論文
- One-Laser-Two-Beam Method for Double Overwrite Speed in Rewritable Phase-Change Optical Discs
- Analyses of Signals from Dual-Layer Phase Change Optical Disks
- GeSbTe Phase Change Material for Blue-Violet Laser at High Linear Speed
- Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
- Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Shrinkage Effect of Local Area of Polymer Film on Adhesion Behavior
- Blister Formation at Photoresist-Substrate Interface
- Local Peeling of Photoresist Film during Ultraviolet Light Exposure
- Adhesion of Photoresist Pattern Baked at 80 to 325℃ to Inorganic Solid Surface
- Adhesion of Photoresist Pattern Baked at 80 to 325℃ in Tetramethyl-ammonium-hydroxide Aqueous Solution
- Characterization of Surface Energetic Behavior by Atomic Force Microscopy
- Adhesion of Photoresist Micropattern to Aluminum Substrate in Alkaline Aqueous Solution
- Dependence of Offset Error on Overlay Mark Structures in Overlay Measurement
- Adhesion between Photoresist and Inorganic Substrate : Resist Material and Process
- Adhesion between Photoresist and Inorganic Substrate
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Clinico-Pathological Studies on the Current State and Features of Carious Lesions in the Permanent Teeth of the Japanese Population
- Compositional Dependence of the Electromagnetic Wave Absorption Properties of BaFe_Ti_xMn_yO_ in the GHz Frequency Range
- Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
- Formation of the High-T_c Phase of Bi_Pb_xSr_Ca_Cu_O_y (0 ≦ x ≦ 0.05)
- Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Intermediate Pressing on Superconducting Characteristics in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
- Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
- Critical Current Density of Bi-Pb-Sr-Ca-Cu-O Superconducting Ceramics : Electrical Properties of Condensed Matter
- Electromagnetic Microwave Absorption Properties of a Fine Structure Formed from the Sm_2Fe_ Compound after Disproportionation in Air or Nitrogen
- Electromagnetic Microwave Absorption of α-Fe Microstructure Produced by Disproportionation Reaction of Sm_2 Fe_ Compound
- Growth and Characterization of Ferroelectric Pb(Zr, Ti)O_3 Films on Interface-Controlled CeO_2(111)/Si(111) Structures
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Usefulness of uracil loading test for detecting 5-fluorouracil metabolic enzyme deficiencies in humans
- Dependency of Adhesion Behavior on Thermtal Stress Distribution in Photoresist Micropatterns
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Direct Observation of Helical Polysilane Nanostructures by Atomic Force Microscopy
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- Modulated Structure of the High-T_c Superconductor Bi-Pb-Ca-Sr-Cu-O Studied by High-Resolution Electron Microscopy and Electron Diffraction
- Processing and Superconducting Properties of GdBa_2Cu_3O_ Ceramics : Electrical Properties Condensed Matter
- Influence of Preparative Conditions on the Superconducting Characteristics in GdBa_2Cu_3O_ Ceramics : Electrical Properties of Condensed Matter
- Observation of GdBa_2Cu_3O_ Ceramic Microstructure : Electrical Properties of Condensed Matter
- Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk
- Read Channel and Format for High-Density Magneto-Optical Disk System
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- Effect of Applied Magnetic Field on Magnetic Properties of Sm-Fe-N Films Prepared by Aerosol Deposition Method
- Microstructures and Magnetic Properties of Sm-Fe-N Thick Films Produced by the Aerosol Deposition Method
- High Resolution Electron Microscopy of Crystal and Defect Structures of the High-T_c Superconductor Ba_2YCu_3O_
- Electron Diffraction and Microscopy of the Structures of La-Ba(Sr)-Cu Oxides at Liquid Helium Temperature
- Rf Power Dependence of AC Josephson Current in Point-Contacts of BaY(Tm)CuO Ceramics
- AC Josephson Effect in Point-Contacts of Ba-Y-Cu-0 Ceramics
- Critical Current Density and Microstructure of Superconducting YBa_2Cu_3O Films Prepared by a Tape Casting Method : Electrical Properties Condensed Matter
- Fabrication of Superconducting YBa_2Cu_3O_ Films by a Tape Casting Method
- Ultrashallow Junction Formation Using Low-Temperature Selective Si_Ge_x Chemical Vapor Deposition
- Fabrication of a Si_Ge_x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
- 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
- Reciprocation Characteristics of a Magnet Levitated above a YBa_2Cu_3O_x Superconductor
- Damping Characteristics of a Magnet Oscillating above a YBCO Superconductor
- Application of Domain Transfer to Magneto-optical Recording: Domain Stabilization during Readout
- Second Harmonic Generation from Si_Ge_x Epitaxial Films with a Vicinal Face:Film Thickness Dependence
- Optical Second Harmonic Generation in Si_Ge_x Film Epitaxially Grown on Si(100)
- On the Reactions of Quenched BaYCuO Powders with Various Materials : Electrical Properties of Condensed Matter
- Crystalline Phases in Superconductor Ba-Y-Cu-O with High T_c Prepared by Melting Method
- Liquid Quenched Superconductor Ba-Y-Cu-O with T_=88 K and AC Josephson Effect at 77 K
- Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
- Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Superficial Aggravation of Sputter-deposited Bi-Sr-Ca-Cu-O Films by Annealing : Electrical Properties of Condensed Matter
- On the Groups with Wirtinger Presentations
- Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Association of Computed Tomography-detected Pulmonary Interstitial Changes with Severe Radiation Pneumonitis for Patients Treated with Thoracic Radiotherapy
- Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
- Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
- Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
- Leakage Current Distribution of Cu-Contaminated Thin SiO2