Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
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概要
- 論文の詳細を見る
A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-15
著者
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Hojo Daisuke
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hojo Daisuke
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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