Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-30

著者

• Tokuda Norio

  Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (

• Tokuda N

  Univ. Tsukuba Ibaraki Jpn

• Tokuda Norio

  Institute Of Applied Physics University Of Tsukuba

• YAMABE Kikuo

  Institute of Applied Physics, University of Tsukuba

• HASUNUMA Ryu

  Institute of Applied Physics, University of Tsukuba

• OKAMOTO Junichi

  Institute of Applied Physics, University of Tsukuba

• Tokuda Norio

  Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)

• Ryu Hasunuma

  Institute Of Applied Physics University Of Tsukuba

• Hasunuma Ryu

  Institute Of Applied Physics University Of Tsukuba

• Yamabe Kikuo

  Institute Of Applied Physics University Of Tsukuba

• Tokuda Norio

  Institute Of Science And Engineering Kanazawa University

• Tokuda N

  Institute Of Science And Engineering Kanazawa University

• Okamoto Junichi

  Institute Of Applied Physics University Of Tsukuba

関連論文

• Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
• SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
• Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
• Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
• Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
• Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
• High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
• Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
• Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
• Selective Growth of Cu Nanowires on Si(111) Substrates
• Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
• Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
• Leakage Current Distribution of Cu-Contaminated Thin SiO_2
• In Situ Measurements of Drastic Change of Electrical Conductivity and Structure upon Electrochemical Lithium Intercalation in Pyrolyzed Poly(hydrazocarbonyl-1-4-phenylenecarbonyl) Film
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Helical Type Kicker for Stochastic Momentum Cooling
• Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
• Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
• Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
• Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
• Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
• Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
• Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
• Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
• Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
• Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
• Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
• Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
• Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
• Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
• Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
• Degradation of Gate Oxide Reliability due to Plasma-Deposited Silicon Nitride
• Leakage Current Distribution of Cu-Contaminated Thin SiO2
• High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond $ p$–$i$–$n$ Junction
• Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water

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